Description
The (GVC750BE101) is a high-power semiconductor module designed for demanding industrial power conversion tasks, featuring integrated gate control for precise switching in large-scale drive systems and exciters.
Technical Parameters
- Type: IGCT (Integrated Gate Commutated Thyristor)
- Voltage Rating: 4500V Peak Off-State Voltage
- Current Rating: 3500A Turn-off Current
- Gate Unit: Integrated drive electronics with optical fiber interface
- Housing: Press-pack design for high pressure mounting
Dimensions & Weight
- Diameter: 150 mm (clamping surface)
- Height: 26 mm (approximate)
- Net Weight: 2.8 kg (6.17 lbs)
- Gross Weight: 3.5 kg (with protective packaging)
Environmental Certifications
- Compliance: RoHS 2011/65/EU and 2015/863/EU
- WEEE: Category 9 (Monitoring and control instruments)
- Storage Temperature: -40°C to +70°C
- Operating Altitude: Up to 2000m without derating
Application Fields
- Medium voltage AC drives (MVD)
- Static Var Compensators (SVC)
- Wind power converters and grid interconnections
- Marine propulsion systems and mining hoists
Product Q&A
- Q: Is the gate unit replaceable separately?
- A: No, the gate unit and the semiconductor wafer are factory-integrated for timing precision.
- Q: What is the required clamping force?
- A: Typically requires 36 kN to 44 kN depending on the specific heat sink assembly.
- Q: How is the module triggered?
- A: It utilizes an optical fiber link to ensure galvanic isolation and noise immunity.
