Description
Technical Parameters
- Part Number: 3BHE014105R0001
- Model: 5SHY35L4512 (Semiconductor Unit)
- Gate Unit: 5SXE08-0166 (Integrated Driver)
- Manufacturer: ABB
- Repetitive Peak Off-State Voltage (VDRM): 4500 V
- Maximum Turn-off Current (ITGQM): 3500 A
- Technology: IGCT (Integrated Gate-Commutated Thyristor)
- Cooling: Press-pack design (Requires external cooling/clamping)
Product Description
The ABB 5SHY35L4512 (3BHE014105R0001) is a high-power Integrated Gate-Commutated Thyristor (IGCT) designed for demanding medium-voltage power electronics applications. It consists of a high-performance thyristor wafer integrated with a low-inductance gate driver unit (5SXE08-0166).
This integration allows the device to transition from conducting to non-conducting states much faster than a standard GTO (Gate Turn-Off thyristor), combining the low conduction losses of a thyristor with the fast switching characteristics of a transistor. It is a critical component for high-power conversion systems, known for its extreme reliability and thermal efficiency.
ABB 5SHY35L4512 3BHE014105R0001 5SXE08-0166
ABB 5SHY35L4512 3BHE014105R0001 5SXE08-0166
Application Areas
- Medium Voltage Drives (MVD): Speed control for large industrial motors in mining, water, and oil industries.
- STATCOM & FACTS: Static Synchronous Compensators used for grid stabilization and reactive power compensation.
- Wind Power Converters: Managing high-power energy conversion in utility-scale wind turbines.
- Rail Traction: Power conversion modules for high-speed locomotives and rail infrastructure.
- Marine Propulsion: Integrated into electric propulsion systems for large vessels.
Product Specifications
- Weight: 3.80 kg
- Dimensions: Approx. 150 mm (Diameter) x 25 mm (Height) — Disc part only.
- Package Type: Press-pack (Housing provides hermetic sealing).
- Country of Origin: Switzerland
Operating Precautions
- Clamping Force: The device requires a precise mechanical clamping force (typically tens of kilonewtons) to ensure proper electrical and thermal contact. Incorrect pressure will lead to immediate device failure.
- Fiber Optic Isolation: The gate unit is controlled via fiber optic cables to provide galvanic isolation between the high-voltage power circuit and the low-voltage control electronics. Ensure cables are not bent beyond their minimum radius.
- ESD Protection: The integrated gate unit contains sensitive CMOS components. Always handle the module using anti-static procedures and keep the shorting pins/covers on until installation.
- Cooling Requirements: Due to the high current density, efficient liquid or forced-air cooling through the heatsinks (clamped to the device) is mandatory to prevent thermal runaway.
Recommended Similar Products
| Model Number | Product Description | Voltage/Current |
|---|---|---|
| 5SHY35L4510 | IGCT Module | 4500V / 3500A |
| 5SHY35L4511 | IGCT Module | 4500V / 3500A |
| 3BHE009681R0101 | Gate Unit Board | Control Spare |
| 5SHY45L4520 | High-Power IGCT | 4500V / 4500A |
| 5SHX26L4510 | Reverse Conducting IGCT | 4500V Series |
